On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate

DOI: 10.1186/s11671-019-2960-8

Keywords: GaN, FET, Nano-pillar, Patterned substrate

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Abstract:

The schematic a 3D pillar structure and b cross-section with labeled geometric parameters of the proposed SP-VFE

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