区熔法拉制硅单晶中多晶棒化刺工艺探讨
The Spine Removal of Poly Crystal Rod in Single Crystal Growth by Floating Zone

区熔硅单晶因其高电阻、高少子寿命的优点，成为电力电子器件制造中不可或缺的半导体材料。本文首先对区熔硅单晶生长的机理进行探究，然后得出了解决多晶棒出刺问题的工艺。
The floating zone silicon single crystal becomes an indispensable material because of its advantage in high resistivity and high minority carrier life. This paper discuss the principle of the growth of the single silicon crystal by floating zone, then a process is gained which remove the spine of poly crystal rod.