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InGaZnO靶材和薄膜的研究进展
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Abstract:
对In-Ga-Zn-O (IGZO)材料推广应用过程中可能的技术阻碍进行了分析，包括IGZO的成分分析、IGZO靶材制备技术分析、IGZO-TFT (IGZO薄膜晶体管)稳定性分析等。通过调节IGZO中氧化物的成分比例，可以调节IGZO的光电性能；IGZO靶材的制备选取1400℃以上的烧结温度可以得到高密度，成分均匀的靶材；通过增加遮光层、保护层、采用双栅结构、设计补偿电路等措施，可以提高a-IGZO TFT的稳定性。
The possible technical obstacles in the promotion and application of In-Ga-Zn-O (IGZO) materials were analyzed, including composition analysis of IGZO, technical analysis of IGZO target material preparation, stability analysis of IGZO-TFT, etc. The photoelectric performance of IGZO can be ad-justed by adjusting the proportion of oxide in IGZO. When using the sintering temperature of 1400？C above, we can get IGZO target with high density and uniform composition; the stability of a-IGZO TFT can be improved by adding shading layer, protective layer, adopting double gate structure, designing compensation circuit and other measures.
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