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- 2017
(ITO)x(SiO2)1-x纳米颗粒薄膜的电输运性质
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Abstract:
为了理解三维纳米颗粒薄膜体系中电子的跳跃传导行为, 采用射频磁控溅射法在玻璃基片上制备了一系列不同Sn：In2O3(ITO)体积分数的三维(ITO)x(SiO2)1-x纳米颗粒薄膜样品, 对绝缘性样品在2～300 K温度范围内电导率与温度的关系进行了系统研究. 在低温区(＜120 K), 电导率与温度遵从的关系, 体系的电子输运机制符合Abeles等提出的跳跃传导模型, 电子的输运以颗粒间的跳跃为主, 颗粒库仑充电能主导着颗粒间电子的输运过程. 而在高温区, 体系的电子输运机制符合热涨落诱导的隧穿导电模型, 热涨落电势主导着颗粒间电子的输运过程.
A series of(ITO)x(SiO2)1-x(here ITO is the abbreviation of Sn doped In2O3)nanogranular films with different ITO volume fractions were deposited on glass substrates by the RF magnetron co-sputtering method. To systematically investigate the charge transport mechanisms in these samples，the dependence of conductivity on temperature was measured over a wide range of temperature from 300 K down to liquid-helium temperatures. The conductivity of the films bears the relation to temperature below 120 K，and it can be explained by the hopping conductance model proposed by Abeles et al，in which the transport of electrons is dominated by the hopping processes，and the origin of the activation energy is the Coulomb charging energy between particles. While at higher temperatures，the electrical transport mechanism is according with the fluctuation induced tunneling model，in which the thermally activated voltage fluctuations across insulating barriers plays an important role
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