金掺杂氧化铪薄膜的电阻转变性能研究
Investigation of Resistive Switching Performance in Au-doped HfO2 Thin Film

采用射频磁控溅射法在ITO基底上制备了HfO2和HfO2：Au薄膜，并对Cu/HfO2/ITO和Cu/HfO2：Au/ITO 三明治结构进行了电阻转变性能测试。结果表明：两者均展现出可逆双极电阻转变性能，但Cu/HfO2：Au/ITO器件的SET电压较小，电压分布更加集中并且性能更稳定。通过对器件双对数I-V曲线拟合分析，发现其电阻转变机制为空间电荷限制电流效应。金的掺入增加了薄膜中的缺陷，提高了基于氧空位的导电通道的均一性，从而优化了器件的电阻转变性能。
HfO2 film and HfO2:Au film are deposited on ITO substrates with reactive sputtering, and the resistive switching properties of Cu/HfO2/ITO and Cu/HfO2:Au/ITO sandwich structures are investigated. Both devices exhibit bipolar resistive switching behavior. Enhanced performances are achieved in the Cu/HfO2:Au/ITO, including low set voltages and improved uniformity of switching parameters. The switching mechanism of the devices is space charge limited current according to the fitting of the double-log I-V curves. The performance improvement in Cu/HfO2:Au/ITO is clarified to defects and uniform oxygen vacancy conducting filaments induced by Au doping