SiC单晶片研磨材料去除率研究
Study on Material Removal Rate in Lapping of SiC Single Crystal Wafer

碳化硅（SiC）单晶片属于难加工材料，在使用之前必须要进行研磨与抛光。材料去除率（Material removal rate，MRR）是衡量SiC单晶片研磨与抛光效率的重要因素。针对传统研磨与抛光过程中考虑磨粒摩擦磨损时建立的材料去除率公式对材料去除的不足，考虑SiC单晶片研磨时磨粒挤压嵌入阶段的材料去除，建立了新型的材料去除率公式。根据SiC单晶片、磨粒与研磨盘之间的接触状态，推导出了包含嵌入阶段和摩擦磨损阶段材料去除的新型MRR数学模型；结合材料的物理特性（如硬度与弹性模量等），进行研磨实验。实验结果与模型预测结果表明，新型材料去除率公式的预测结果更接近实际情况。
Silicon carbide (SiC) single crystal wafer is difficult to be machined, which must be lapped and polished. The material removal rate (MRR) is an important factor in the lapping and polishing of SiC single crystal wafer, and which has great significance for SiC single crystal wafer processing. In traditional process of grinding and polishing, the deficiency of material removal rate (MRR) model is due to considering friction and wear of abrasive particles. Considered the material removal of the lapping particles in the extrusion stage, a new model for material removal rate of SiC single crystal wafer is established. According to the contact state between SiC single crystal wafer, particles and pad, a new model for MRR is established contain embedded phases and the friction and wear of the material removal rate. Combing the hardness and modulus of elasticity for grinding experiments, the experimental results are compared with the predicted. It is concluded that the predicted via the present MRR model is closer to the physical truth