纤锌矿InGaN staggered量子阱中的激子态和光学性质
Excition states and optical properties in wurtzite InGaN staggered quantum wells

本文将基于有效质量近似下的变分法，理论研究了纤锌矿InGaN/GaN staggered 量子阱中的激子态和光学性质。数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显地影响。当阱宽增加时，量子受限效应减弱，激子结合能降低, 带间发光波长增加。另一方面，当量子阱中staggered受限势增加时，量子受限效应增强，激子结合能升高，带间发光波长降低。本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered 量子阱中的激子态和光学性质。
In this work, based on the effective mass approximation and the variational methods, exciton states and optical properties are calculated theoretically in wurtzite InGaN/GaN staggered quantum wells. Numerical results show that the effects of quantum size and staggered barrier height are obvious on exciton states and optical properties in the wurtzite InGaN quantum wells. When the well width increases, quantum confinement effects become weaken, exciton binding energy decreases, the emission wavelength increases. On the other hand, when the staggered barrier height increases, quantum confinement effects increase, exciton binding energy increases, emission wavelength decreases. Therefore, our results indicate that exition states and optical properties can be tuned effectively by quantum size and staggered barrier height in the wurtzite InGaN staggered quantum wells.