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- 2016
V2O5与Al2O3复合改性CaSiO3陶瓷的烧结性能与微波介电性能
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Abstract:
为降低CaSiO3陶瓷的烧结温度, 通过在CaSiO3粉体中添加1wt%的Al2O3以及不同量的V2O5, 探讨了V2O5添加量对CaSiO3陶瓷烧结性能、微观结构及微波介电性能的影响规律。结果表明:适量地添加V2O5除了能将V2O5-Al2O3/CaSiO3陶瓷的烧结温度从1 250 ℃降低至1 000 ℃外, 还能抑制CaSiO3陶瓷晶粒异常长大并细化陶瓷晶粒。在烧结过程中, V2O5将熔化并以液相润湿作用促进CaSiO3陶瓷的致密化进程;同时, 部分V2O5还会挥发, 未挥发完全的V2O5将与基体材料反应生成第二相, 第二相的出现将大幅降低陶瓷的品质因数。综合考虑陶瓷的烧结性能与微波介电性能, 当V2O5添加量为6wt%时, V2O5-Al2O3/CaSiO3陶瓷在1 075 ℃下烧结2 h后具有良好的综合性能, 其介电常数为7.38, 品质因数为21 218 GHz。 In order to reduce the sintering temperature of CaSiO3 ceramic, by adding 1wt% Al2O3 and different amounts of V2O5 into CaSiO3 powders, the effects of V2O5 additive amount on the sintering behavior, microstructure and microwave dielectric properties of CaSiO3 ceramics were investigated. The results show that the appropriate addition of V2O5 can not only reduces the sintering temperature of V2O5-Al2O3/CaSiO3 ceramics from 1 250 ℃ to 1 000 ℃, but also restrict the abnormal growth of CaSiO3 ceramic grains and refine the ceramic grains. In the sintering process, V2O5 will melt and promote the densification process of CaSiO3 ceramic by liquid phase wetting effect. At the same time, some of V2O5 will volatilize, and the non-volatilized V2O5 will react with the matrix material to form the second phase, and the emergence of the second phase reduces the quality factor of the ceramic substantially. Taking the sintering behavior and microwave dielectric properties into consideration synthetically, when V2O5 additive amount is 6wt%, the V2O5-Al2O3/CaSiO3 ceramic sintered at 1 075 ℃ for 2 h has favorable comprehensive properties, the dielectric constant is 7.38 and the quality factor is 21 218 GHz. 浙江省自然科学基金(LQ13F050003); 国家级大学生创新创业训练计划(201410356006)
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