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-  2018 

改性石墨烯/聚(偏二氟乙烯-共-六氟丙烯)复合材料薄膜的制备与性能
Preparation and properties of modified graphene/poly(vinylidene fluoride-co-hexafluoropropylene) composite films

DOI: 10.13801/j.cnki.fhclxb.20171208.001

Keywords: 石墨烯,复合材料,介电性能,相容性,晶型转变
graphene
,composites,dielectric properties,compatibility,phase transformations

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Abstract:

采用改进Hummers法对天然鳞片石墨进行氧化和超声剥离处理制备氧化石墨烯(GO),将十三氟辛基三乙氧基硅烷(FAS)与GO反应并还原得到FAS修饰的还原氧化石墨烯(FAS-RGO)。利用溶液涂覆成膜工艺制得FAS-RGO/聚(偏二氟乙烯-共-六氟丙烯)(P(VDF-HFP))复合材料。采用FTIR、XPS、XRD、Raman和TEM表征了FAS-RGO的结构与形貌,同时研究了FAS-RGO用量对FAS-RGO/P(VDF-HFP)介电性能的影响。结果表明:FAS包覆在RGO的表面,有效解决了RGO容易团聚的问题,并且FAS的引入提高了RGO与P(VDF-HFP)的界面结合,改善了RGO在P(VDF-HFP)中的分散性,FAS-RGO还能提高P(VDF-HFP)的结晶性,促进形成β晶型。当FAS-RGO的体积分数为1.6vol%、在100 Hz频率时,FAS-RGO/P(VDF-HFP)复合材料的介电常数为62,较纯P(VDF-HFP)提高了5.2倍,同时FAS-RGO/P(VDF-HFP)复合材料的介电损耗较低。 Graphene oxide (GO) was synthesized through a modified Hummers method from graphite flakes. Then tridecafluorooctyl triethoxysilane modified reduced graphene oxide (FAS-RGO) was obtained by reducing the GO functioned with FAS. And the composite films of poly(vinylidene fluoride-co-hexafluoropropylene)(P(VDF-HFP)) incorporating FAS-RGO were prepared by a solution-cast method. FTIR, XRD, XPS, Raman and TEM were employed to characterize the structure of FAS-RGO. Meanwhile, the effect of FAS-RGO content on the dielectric property of FAS-RGO/P(VDF-HFP) was discussed. The results show that FAS layer is coated on RGO surface, which can solve the problem of accumulation of RGO effectively. FAS layer also increases interfacial combination of the FAS-RGO/P(VDF-HFP) composite films and improves the dispersion of RGO in the matrix. The FAS-RGO could nucleate the P(VDF-HFP) crystallization and induce the formation of β phase. A dielectric constant of FAS-RGO/P(VDF-HFP) is up to 62 at 100 Hz, which is 5.2 times that of pure P(VDF-HFP) film. In this case, FAS-RGO/P(VDF-HFP) composite films show low dielectric loss when the concentration of FAS-RGO is 1.6vol%. 国家自然科学基金(51273157;51773163);湖北省自然科学基金创新群体项目(2016CF008)

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