具有无机-有机杂化钙钛矿结构的CH3NH3PbI3通常偏向于显示n型半导体特性，本文以五氧化二钽（Ta2O5）作为绝缘层，制备了基于钙钛矿CH3NH3PbI3单晶的顶栅结构场效应晶体管，暗态下更明显地观察到了CH3NH3PbI3所具有的p型场效应特性，空穴场效应迁移率达到8.7×10-5 cm2·V-1·s-1，此暗态空穴迁移率比原有报道的基于CH3NH3PbI3多晶薄膜的SiO2底栅场效应晶体管提高了一个数量级。此外，光照对CH3NH3PbI3单晶场效应晶体管的性能有强烈影响。与底栅结构CH3NH3PbI3多晶场效应晶体管不同，即使有栅极和绝缘层的遮挡，5.00 mW·cm-2的光照仍可使CH3NH3PbI3单晶场效应晶体管的空穴电流提高一个数量级（VGS（栅源电压）=VDS（漏源电压）=20 V），光响应度达到2.5 A·W-1。本文工作实现了对CH3NH3PbI3场效应晶体管载流子传输的选择性调控，表明在没有外部因素的参与下，通过合适的器件设计，CH3NH3PbI3同样具有制备成双极性晶体管的潜力。 Organic-inorganic hybrid perovskite methylammonium lead iodide (CH3NH3PbI3) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH3NH3PbI3 single crystal with tantalum pentoxide (Ta2O5) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10-5 cm2·V-1·s-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3PbI3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3PbI3 single crystal. Different from a CH3NH3PbI3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm-2 caused the hole current to increase by one order of magnitude compared with that in the dark (VGS (gate-source voltage)=VDS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH3NH3PbI3 also has potential for use in ambipolar transistors
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