全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用：99美元
投递稿件

查看量下载量

相关文章

更多...
-  2016 


DOI: 10.3866/PKU.WHXB201605272

Full-Text   Cite this paper   Add to My Lib

Abstract:

采用偏压受限扩散聚集模型研究溶液中银树形纳米结构的生长。模拟中，在二维正方形格子中引入了等腰直角三角形粒子进行模拟，同时运用不同的粘贴概率来描述表面活性剂的效果。模拟结果表明树形纳米结构随着偏压的增大而变得更密。表面活性剂的加入使得树形纳米结构变得更加对称和规则。更进一步，当表面活性剂的效果足够强且外加偏压很小的时候，银纳米颗粒聚集成了银纳米片。模拟结果有利于定性解释相关的实验结果。
The bias diffusion-limited aggregation model is used to study the growth of silver dendritic nanostructures in solution. In the simulation, right-angled isosceles triangle particles are introduced in twodimensional square grids and the sticking possibilities of different particle sides are introduced to describe the effect of the surfactant. Our simulation results show that the dendritic nanostructures become denser with increasing bias voltage. It is also found that the dendritic nanostructures become much more symmetrical and regular when the surfactant is applied. Furthermore, if the effect of the surfactant is strong enough and the bias voltage is small, the branches of the nanostructures are assembled into silver plates. Our simulation results are helpful to explain the experimental results qualitatively

 References

[1]  2 Shi F. ; Song Y. ; Niu J. ; Xia X. ; Wang Z. ; Zhang X Chem. Mater. 2006, 18, 1365. doi: 10.1021/cm052502n
[2]  5 Xiao J. P. ; Xie Y. ; Tang R. ; Chen M. ; Tian X. B Adv. Mater. 2001, 13, 1887. doi: 10.1002/1521-4095(200112)13:24<1887::AID-ADMA1887>3.0.CO;2-2
[3]  6 Zheng X. J. ; Jiang Z. Y. ; Xie Z. X. ; Zhang S. H. ; Mao B.W. ; Zheng L. S Electrochem. Commun. 2007, 9, 629. doi: 10.1016/j.elecom.2006.10.039
[4]  7 Gutés A. ; Carraro C. ; Maboudian R J. Am. Chem. Soc. 2010, 132, 1476. doi: 10.1021/ja909806t
[5]  8 Wang M. ; Zhong S. ; Yin X. B. ; Zhu J. M. ; Peng R.W. ; Wang Y. ; Zhang K. Q. ; Ming N. B Phys. Rev. Lett. 2001, 86, 3827. doi: 10.1103/PhysRevLett.86.3827
[6]  9 Sun B. ; Zou X.W. ; Jin Z. Z Phys. Rev. E 2004, 69, 067202. doi: 10.1103/PhysRevE.69.067202
[7]  1 Tarascon J. M. ; Armand M Nature 2001, 414, 359. doi: 10.1038/35104644
[8]  12 Chazalviel J. N Phys. Rev. A 1990, 42, 7355. doi: 10.1103/PhysRevA.42.7355
[9]  13 Elezgaray J. ; Léger C. ; Argoul F J. Electrochem. Soc. 1998, 145, 2016. doi: 10.1149/1.1838592
[10]  15 Léger C. ; Elezgaray J. ; Argoul F J. Electroanal. Chem. 2000, 486, 204. doi: 10.1016/S0022-0728(00)00143-1
[11]  16 Wang M. ; van Enckevort W. J. P. ; Ming N. B. ; Bennema P Nature 1994, 367, 438. doi: 10.1038/367438a0
[12]  18 You H. J. ; Fang J. X. ; Chen F. ; Shi M. ; Song X. P. ; Ding B J. J. Phys. Chem. C 2008, 112, 16301. doi: 10.1021/jp8042126
[13]  20 Lee G. J. ; Shin S. I. ; Oh S. G Chem. Lett. 2004, 33, 118. doi: 10.1246/cl.2004.118
[14]  22 Sun X. ; Hagner M Langmuir 2007, 23, 9147. doi: 10.1021/la701519x
[15]  23 Zhou Y. ; Yu S. H. ; Wang C. Y. ; Li X. G. ; Zhu Y. R. ; Chen Z Y. Adv. Mater. 1999, 11, 850. doi: 10.1002/(SICI)1521-4095 (199907)11:10<850::AID-ADMA850>3.0.CO;2-Z
[16]  24 Kang Z. ; Wang E. ; Lian S. ; Mao B. ; Chen L. ; Xu L Mater. Lett. 2005, 59, 2289. doi: 10.1016/j.matlet.2005.03.005
[17]  26 Witten T. A. ; Sander L. M Phys. Rev. B 1983, 27, 5686. doi: 10.1103/PhysRevB.27.5686
[18]  27 Nagatani T. ; Sagués F Phys. Rev. A 1991, 43, 2970. doi: 10.1103/PhysRevA.43.2970
[19]  30 Meakin P Phy. Rev. A 1983, 27, 1495. doi: 10.1103/PhysRevA.27.1495
[20]  31 Qin Y. ; Song Y. ; Sun N. ; Zhao N. ; Li M. ; Qi L Chem. Mater. 2008, 20, 3965. doi: 10.1021/cm8002386
[21]  3 Vicsek T Fractal Growth Phenomena; World Scientific:Singapore 1992.
[22]  4 Fang J. X. ; Ding B. J. ; Song X. P. ; Han Y Appl. Phys. Lett. 2008, 92, 173120. doi: 10.1063/1.2888770
[23]  10 Cronemberger C. M. ; Sampaio L. C Phys. Rev. E 2006, 73, 041403. doi: 10.1103/PhysRevE.73.041403
[24]  11 Wu X. Z. ; Pei M. S. ; Wang L. Y. ; Li X. N. ; Tao X. T Acta Phys. -Chim. Sin. 2010, 26, 3095. doi: 10.3866/PKU.WHXB20101132
[25]  吴馨洲; 裴梅山; 王庐岩; 李肖男; 陶绪堂. 物理化学学报, 2010, 26, 3095. doi: 10.3866/PKU.WHXB20101132
[26]  14 Monroe C. ; Newman J J. Electrochem. Soc. 2003, 150, A1377. doi: 10.1149/1.1606686
[27]  17 Nahal A. ; Mostafavi-Amjad J. ; Ghods A. ; Khajehpour M. R.H. ; Reihani S. N. S. ; Kolahchi M. R J. Appl. Phys. 2006, 100, 053503. doi: 10.1063/1.2336493
[28]  19 Sawada Y. ; Dougherty A. ; Gollub J. P Phys. Rev. Lett. 1986, 56, 1260. doi: 10.1103/PhysRevLett.56.1260
[29]  21 Rashid M. H. ; Mandal T. K J. Phys. Chem. C 2007, 111, 16750. doi: 10.1021/jp074963x
[30]  25 Witten T. A. ; Sander L. M Phys. Rev. Lett. 1981, 47, 1400. doi: 10.1103/PhysRevLett.47.1400
[31]  28 Sander L. M. ; Cheng Z. M. ; Richter R Phys. Rev. B 1983, 28, 6394. doi: 10.1103/PhysRevB.28.6394
[32]  29 Xiong H. L. ; Yang Z. M. ; Li H Acta Phys. -Chim. Sin. 2014, 30, 413. doi: 10.3866/PKU.WHXB201401203
[33]  熊海灵; 杨志敏; 李航. 物理化学学报, 2014, 30, 413. doi: 10.3866/PKU.WHXB201401203
[34]  32 Hong X. ; Wang G. Z. ; Wang Y. ; Zhu W. ; Shen X. S Chin. J. Chem. Phys. 2010, 23, 596. doi: 10.1088/1674-0068/23/05/596-602
[35]  33 Ye W. ; Shen C. ; Tian J. ; Wang C. ; Bao L. ; Gao H Electrochem. Commun. 2008, 10, 625. doi: 10.1016/j.elecom.2008.01.040
[36]  34 Liao F. ; Wang Z. F. ; Hu X. Q Colloid J. 2011, 73, 504. doi: 10.1134/s1061933x11040053
[37]  35 Zhang L. ; Ai Z. ; Jia F. ; Liu L. ; Hu X. ; Yu J. C Chemistry 2006, 12, 4185. doi: 10.1002/chem.200501404

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133