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- 2017
水溶液显影环氧乙烷光刻胶的显影条件及机理探索
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Abstract:
光刻胶是微纳米加工领域关键的材料之一，主要用于图形转移和蚀刻过程中对基材的保护. 基于水性溶液的光刻工艺可以减少污染，是未来材料发展和工艺改进的方向之一. 本论文针对同一种光刻胶(KMPR)，对比有机溶剂和碱性显影液的显影效果，得到最佳水溶液显影液— KOH显影液，探索并得到其显影的较佳浓度范围，通过实验验证和解释温度和浓度的影响.
： Photoresist is a key material in micro-fabrication for microstructure transferring during photolithography and protecting substrate during dry/wet etching. The photoresist developed using aqueous solution is more environmental friendly, which is the future of this type of materials. In this article, we focused on the KMPR resist, a type of epoxy photoresist which could be developed by either aqueous solution or organic solvent. We studied and compared the parameters and process of the aqueous solution (KOH and TMAH) or organic solvent (PGEMA) developing, mainly focused on the developing conditions for KOH solution and obtained an optimum KOH concentration and working temperature. And the mechanism of the developing process has also been interpreted
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