阳极Ta/Ta2O5的薄膜曲界面结构特征及形成机理
Curve surface structure characteristics and forming mechanism of anode Ta/Ta2O5 film

采用电化学方法制备了钽电解电容器阳极.通过场发射扫描电镜和理论分析对钽阳极断面的曲面结构特征及其形成机理进行了研究.研究结果发现Ta/Ta2O5的薄膜曲界面存在间隙层(<1nm)，该间隙层为氧空位及其缺陷离子迁移所致；曲面结构的应力模型表明曲面薄膜界面的电化学生长过程生产缺陷浓度高于平面系统，讨论了钽电解电容器曲面薄膜的形成过程对电场应力畸变屏蔽的机理.
Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism of tantalum anode section were studied by field emission scanning electron microscopy (SEM) and theoretical analysis. The results show that a gap layer (<1nm), caused by oxygen vacancy and its defect ion migration, is embedded in the Ta/Ta2O5 film curve surface. Moreover, surface film of the interface structure stress model shows that the defect concentration produced in the surface electrochemical growth process is higher than that of planar system. The mechanism of the electric field stress distortion shielding related to the formation process of the tantalum electrolytic capacitor film is discussed