肖特基二极管对微波响应的多物理场协同计算
Research on the microwave response of a Schottky diode using a multi physics co simulation method

以型号为HSMS 282c的肖特基二极管为例，利用多物理场协同算法对其微波响应特性进行了计算.通过比较器件在有或无封装时对特定频率的响应情况，发现封装可使器件的耗散功率增加87%.本文还对比了肖特基二极管在不同频率微波激励下的平均耗散功率，发现器件的耗散功率在 3？？5 GHz附近存在峰值.当二极管的工作频率高于3？？2 GHz时，耗散功率会随环境温度的增加而增加.研究结果对于半导体器件的微波效应研究具有重要的参考价值.
A multi physics co simulation method is employed for analyzing the microwave response of a Schottky diode with model number HSMS 282c. Results show the device’s power dissipation with package is 87 percentages higher than that without package. The average power dissipation in the diode under the microwave excitation of different frequencies is also studied. It shows there is a maximum power dissipation of the diode at about 3？？5 GHz. When the diode works above 3？？2 GHz, its power dissipation will increase with ambient temperature rising. The obtained results have great value for the study of microwave effects in semiconductor devices