掺杂磁垒纳米结构中的GMR效应及调控
Delta-doping-controllable magnetoresistance device in a magnetically modulated semiconductor nanostructure

通过在半导体异质结上的上下表面沉积两条平行的铁磁条带可获得一个巨磁阻器件。为了更好地调控其性能，我们利用原子层掺杂技术，在该器件中加入 势，并计算了该器件的投射系数、电导和磁阻比率。研究发现，加入 势后，该器件同样具有明显的巨磁阻效应，且其磁阻比率与加入 势的权重和位置密切相关。因此，我们可以通过改变加入 势的位置来调控巨磁阻器件，设计出磁阻比率可调的磁信息存储器。
A magnetoresistance (MR) device was proposed by depositing two parallel ferromagnetic stripes on top and bottom of a semiconductor heterostructure. In order to manipulate its performance, we dope a tunable δ-potential into the device by atomic layer doping technique. Transmission, conductance and MR ratio are calculated for the δ-doped MR device. It is confirmed that an obvious MR effect still exists in the device even though a δ-doping is comprised. Results show that the MR ratio varies intensely with the weight and/or the position of the δ-doping. Therefore, one can manip- ulate structurally the MR device by altering the δ-doping, and a tunable MR device can be obtained for magnetic information storage