W掺杂和电化学表面处理制备高光电化学性能的BiVO4光阳极
Synthesis of BiVO4 photoanode with improved photoelectrochemical performance by W-doping and surface electrochemical pretreatment

通过滴涂的方法合成了W掺杂BiVO4光阳极。通过XRD、紫外―可见吸收光谱、扫描电镜(SEM)对BiVO4光阳极进行表征，并对BiVO4光阳极进行了光电化学表征。为了提高W掺杂BiVO4光阳极的光电性能，对W掺杂BiVO4光阳极的制备条件进行了优化。光电化学测试结果表明电化学表面处理能够提高W掺杂BiVO4光阳极的光电化学性能。说明W掺杂和电化学表面处理可以增加BiVO4光阳极光电流。并进行了BiVO4光阳极光电流增加的机理分析。
W-doped BiVO4 photoanode was obtained through drop-casting method. The physical and photophysical properties of the BiVO4 photoanode were investigated by X-ray diffraction (XRD), UV-vis absorption spectroscopy and scanning electron microscopy (SEM). Photo-electrochemical performance was evaluated for the W-doped BiVO4 photoanode. In terms of maximizing the photoelectrochemical performances of the W-doped BiVO4 photoanodes, the synthsis conditions were optimized. The W-doped BiVO4 photoanode exhibits improved photoelectrochemical performance after the electrochemical surface pretreatment. The photoelctrochemical response of BiVO4 photoanode can be improved by both tungsten doping and the electrochemical surface pretreatment. A possible mechanism was also proposed to explain the reason for the photocurrent enhancement