SiC光学材料的电弧增强等离子体加工方法

SiC光学材料具有高化学稳定性，其在普通的等离子体加工中难以获得较高的加工效率。在等离子体加工实验中，发现提高等离子体的自身射频电压可增强等离子体与SiC材料之间的电弧放电作用，而借助电弧的增强作用可提高SiC材料的加工效率，因此提出电弧增强等离子体加工方法。为研究电弧的形成原理，使用自制的探针分别测量了普通电感耦合等离子体和电弧增强等离子体的电压。分别使用传统方法和电弧增强方法对S-SiC进行直线扫描加工实验，证明了电弧增强等离子体加工方法具有更高的加工效率。
Since the chemical stability of SiC is extremely high, there is a low efficiency of SiC mirrors for conventional inductively coupled plasma (ICP) processing method. The plasma processing experiment reveals that the increase of plasma radio-frequency can enhance the arc discharge effect between plasma and SiC. The enhancing effect of arc can increase the processing efficiency of SiC, so the arc-enhanced plasma (AEP) processing method was developed. In order to research the formation principle of arc, the voltages of ICP and AEP were measured respectively by using the self-made probe. The conventional and the arc-enhanced methods were employed respectively to conduct linear scanning machining experiment on the sintered silicon carbide (S-SiC), which demonstrates the higher processing efficiency of AEP method.