利用脉冲激光的片上系统芯片单粒子效应试验

为评估脉冲激光试验对研究SoC（片上系统芯片）单粒子效应的有效性，构建了一个65 nm SoC的脉冲激光试验系统，并进行了试验。提出并采用坐标定位法、有源区聚焦法、ΔZ补偿法等针对大规模倒装焊集成电路的试验方法。对SoC的片上存储器、寄存器文件、RapidIO、DICE触发器等部件进行了脉冲激光试验和分析。结果表明：片上存储器对脉冲激光最为敏感，部件的激光试验与相应的重离子试验现象吻合，利用脉冲激光试验可有效研究纳米工艺下大规模集成电路的单粒子效应。
In order to evaluate the effectiveness of pulse laser experiment aiming at the single event effect of SoC(System on Chip), an experiment system was established based on a 65 nm SoC. The methods of coordinate setting, focusing on source and compensation about ΔZ on flip chip integrated circuit were proposed and employed. Pulsed laser tests were carried on static random access memory, register file, RapidIO and Dice flip-flop. The results indicate that SRAM is the most sensitive area and the results on these modules are consistent with the corresponding results under heavy-ion experiment. Therefore, the pulse laser is suitable for single-event effect researches on large-scale integrated circuit designed with nanometer technology. 