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-  2017 

NiS2纳米片的制备及其在非对称超级电容器中的应用
Preparation of NiS2 nanosheet and its application in asymmetric supercapacitor

DOI: 10.13208/j.electrochem.170103

Keywords: 牺牲模板法,NiS2纳米片,非对称电容器,
sacrificial template method
,NiS2,Asymmetric supercapacitor

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Abstract:

摘要 本文采用牺牲模板法,以Ni(OH)2作为前驱体制备NiS2. 通过对NiS2进行XRD、EDS、BET、SEM及TEM等表征来研究NiS2的元素组成及结构形貌. SEM及TEM结果显示前驱体及NiS2均为纳米片结构. 电化学测试结果表明NiS2存在着优秀的电容性能,在电流密度为1 A·g-1时,NiS2比电容能够达到1067.3 F·g-1,同时具有高的倍率特性. 为了进一步探究NiS2作为电活性材料的实用性,以NiS2作为阳极材料,活性碳(AC)作为阴极组装成非对称超级电容器,在功率密度为0.8 kW·kg-1,能量密度高达38.4 Wh·kg-1,并且在3000次恒流充放电后,比电容依然保持93.7%

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