SPICE model of trench-gate MOSFET device

A novel simulation program with an integrated circuit emphasis(SPICE)model developed for trench-gate metal-oxide-semiconductor field-effect transistor(MOSFET)devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgs and drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore, the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.