Transition metal chalcogenide nanocomposite thin films deposited by chemical routes are currently attracting wide attention being inexpensive, simple and have utility for large area applications. The role of substrate becomes very important in film deposition as well as in controlling their properties due to strain induced properties modification and lattice mismatch. CuS/PVA nanocomposite thin films were successfully deposited on glass and silicon substrates using sol-gel technique. Thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible (UV-VIS) and Raman spectroscopy. Structural data confirm the amorphous nature of as grown films which transform into crystalline films after annealing at 200°C. The degree of crystallinity seems to be better in film deposited on silicon substrate in comparison to those grown over glass substrate with average crystallite sizes ≅？4.00 nm and 7.00 nm for films deposited on glass and silicon substrate respectively. Atomic force microscopy (AFM) images in dynamic as well as contact modes display nanoparticles embedded in polymer network. The films surface roughness parameters quantitatively estimated from AFM micrographs are compared. Raman spectra show a sharp peak at ≅474 cm¯1 assigned to S-S stretching mode of S2 ions in films grown on both substrates and associated as due to presence of hexagonal (covellite) crystal structure. Optical band gaps of thin film on glass and silicon substrate are 2.10 eV and 2.02 eV respectively. The effect of substrate on the measured properties is discussed.
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