Numerical simulation has been used to investigate the effect of different buffer？layer components on the performance of CuInGaSe2？solar cells？with SCAPS-1D？software. The main photovoltaic parameters of simulated devices: open-circuit？voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),？areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion？efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This？result is validated by experimental results？(20%). At 300 K, when the thickness？of？the buffer layer (CdS, ZnS, ZnSe,？InSe2) increases from 100 nm to 500？nm,？with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,？with the other parameters maintained？constant, both open circuit voltage and conversion efficiency also decrease.？The？effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases？of 3% than a single buffer CdS.
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