P型Mn掺杂TiO₂纳米薄膜的制备及其光电性能研究
Fabrication and Optical-Electrical Properties of P-Type Manganese-Doped Titanium Dioxide Nano-Films

DOI: 10.12677/AMC.2016.43003, PP. 21-29

Keywords: Mn掺杂，磁控溅射，TiO₂，光电性能
Mn Doping, Magnetron Sputtering, Titanium Dioxide, Optical and Electrical Properties

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Abstract:

采用射频磁控溅射法以Mn_0.8Ti_1.2O₃固相陶瓷靶为靶材，在石英衬底上制备了Mn掺杂TiO₂纳米薄膜，通过XRD、EDS、AFM、XPS、UV-Vis-IR、两探针法和半导体霍尔效应等测试表征技术研究了Mn掺杂对TiO₂薄膜的晶体结构、表面化学态和光电性能的影响。结果表明，Mn掺杂TiO₂薄膜为p型半导体，随着溅射功率的增加，薄膜的光吸收向可见光方向移动，电导率增加。过量Mn掺杂会导致Mn元素的析出，光吸收性能和电学性能均变差，说明Mn掺杂是TiO₂薄膜光电性能改善的根本原因。
Manganese, as a 3d transition metal element, is considered to be one of the potential dopants for TiO₂ to adjust the optical-electrical properties of TiO₂, aiming to improve the utilization of sunlight, conductivity and carrier mobility of TiO₂. The modified TiO₂ could then be widely used in the in-telligent photo-catalytic, semiconductor sensors, solar cells, etc. In this paper, we have prepared p-type Manganese-doped TiO₂ rutile nano-film on amorphous silica/quartz substrates by radio frequency magnetron sputtering method with a Mn_0.8Ti_1.2O₃ solid ceramic target. XRD, EDS, AFM, XPS, UV-Vis-IR, Two-Probe and Hall effect measurements were used to investigate the influences of Mn doping on the crystalline structure, surface state, optical and electrical properties of TiO₂ nano-film. The results have shown that Mn doping could effectively extend the light absorption re-gion of TiO₂ from UV to visible light. The doping ratio was tuned by adjusting the sputtering power, the higher the sputtering power, the bigger ratio Mn was doped into TiO₂. Electrical conductivity of the thin films increased with increase of Mn doping ratio. Mn precipitated when the sputtering power for Mn_0.8Ti_1.2O₃ reached 150 W, suggesting that there is incorporation limit for Mn in TiO₂ lattice. The P type Mn doped TiO₂ could be used in various applications such as solar cell, gas sen-sors and photosplitting of water.

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