Threshold
voltage (VTH) is the most evocative aspect of MOSFET operation. It
is the crucial device constraint to model on-off transition characteristics.
Precise VTH value of the device is extracted and evaluated by
several estimation techniques. However, these assessed values of VTH diverge from the exact values
due to various short channel effects (SCEs) and non-idealities present in the
device. Numerous prevalent VTH extraction methods are discussed. All
the results are verified by extensive 2-D TCAD simulation and confirmed through
analytical results at 10-nm technology node. Aim of this research paper is to explore and
present a comparative study of largely applied threshold extraction methods for
bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes.
Application of the threshold extraction methods to implement noise analysis is
briefly presented to infer the most appropriate extraction method at nanometer
technology nodes.
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