We present a high quality single-layer graphene (SLG), triple layer graphene (TLG)
and few layer graphene (FLG) sheets have been synthesized on cu substrate (metal
catalyst) by direct current plasma enhanced chemical vapor deposition (DC-PECVD)
at low growth temperature (from 600°C to 750°C). Mixture gas ratio, plasma electrical
current and substrate temperature were investigated to determine the optimum
condition of high quality single-layer graphene sheet synthesized. The characterization
of graphene sheet was performed by X-ray diffraction (XRD), high resolution
transmission electron microscope (HRTEM), electron diffraction, Raman spectroscopy
and photoluminescence (PL) spectrum. Photoluminescence and Raman result
was coupled to investigation and evaluation of single-layer graphene sheet.
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