In this
paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which
use the semi-floating-gate (SFG) structure to speed up the logic circuit.
Higher speed in the lower supply voltages and robustness against the input
signal delay variations are the main advantages of the proposed gates in
comparison to the previously reported domino dual-rail NOR gates. The
simulation results in a typical TSMC 90 nm CMOS technology show that the
proposed NOR gate is more than 20 times faster than conventional dual-rail NOR
gate.
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