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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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sic单晶的生长及其器件研制进展
Keywords: sic体单晶生长,外延生长,sic器件
Abstract:
？sic具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景.本文综述了半导体sic体单晶和薄膜的生长及其器件研制的概况.
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