全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

硒化温度对铜铟镓硒太阳能电池吸收层性能的影响

Keywords: 无机非金属材料,?太阳能电池,?铜铟镓硒,?预制膜硒化,?硒化温度,?odc相,?cu--se相

Full-Text   Cite this paper   Add to My Lib

Abstract:

?用预制膜硒化法制备铜铟硒系太阳能电池的吸收层cigse薄膜,用x射线荧光分析(xrf)、扫描电子显微镜(sem)、x射线衍射分析(xrd)和拉曼谱分析(raman)以及基于霍尔效应分别测定或观测cigse薄膜的成分、表面形貌、结构以及电阻率和少数载流子迁移率,研究了在近玻璃软化点520--560℃区间硒化温度对薄膜成分、表面形貌、结构和电学性能的影响。结果表明:当硒化温度在520--560℃时,cigse薄膜的成分和表面形貌保持不变,但是随着硒化温度的升高cigse薄膜中有序缺陷相(odc)和cu--se短路相增加,提高了薄膜内的缺陷浓度,使薄膜的少数载流子迁移率降低、电阻率增大。

References

[1]  antonioluque,stevenhegedus,handbookofphotovoltaicscienceandengineering(england,johnwiley&sonsltd,2003)p.566~570
[2]  j.s.park,z.dong,etal,cuinse2phaseformationduringcu2se/in2se3interdiffusionreaction,journalofappliedphysics,87(8),3683-3690(2000)
[3]  r.pal,k.k.chattopadhyay,eta,effectofetchingonthesurfacemorphologyandgrainboundaryparametersofcu-richcuinse2films,thinsolidfilms,254,111-115(1995)
[4]  r.kaigawa,t.uesugi,instantaneouspreparationofcuinse2filmsfromelementalin,cu,separticlesprecursorfilmsinanon-vacuumprocess,thinsolidfilms,517,2184-2186(2009)
[5]  shenjianyun,w.k.kim,thermodynamicdescriptionoftheternarycompoundsinthecu-in-sesystem,raremetals,25(5),481(2006)
[6]  s.niki,p.j.fons,etal,effectsofthesurfacecu2-xsephaseonthegrowthandpropertiesofcuinse2films,appliedphysicsletters,74(11),1630-1632(1999)
[7]  liufang-fang,sunyun,zhanglietal,studyonthediodecharacteristicsofcu(in,ga)se2thinfilmsolarcells,journalofsyntheticcrystals,38(2),455-459(2009)
[8]  (刘芳芳,孙云,张力等,cu(in,ga)se2薄膜太阳电池二极管特性的研究,人工晶体学报,38(2),455-459(2009))
[9]  t.schlenker,m.luisvalero,etal,graingrowthstudiesofthincu(in,ga)se2films,journalofcrystalgrowth,264,178–183(2004)
[10]  v.alberts,bandgapoptimizationincu(in1-xgax)(se1-ysy)2bycontrolledgaandsincorporationduringreactionofcu-(in,ga)intermetallicsinh2seandh2s[j].thinsolidfilms,517,2115-2120(2009)
[11]  michaeloertel,thomashahn,etal,cuinse2solarcellsbysequentialabsorberlayerprocessing,phys.statussolidi,6(5),1253–1256(2009)
[12]  neelkanthg.dhere,viveks.gade,etal,developmentofcigs2thinfilmsolarcells,.materialsscienceandengineeringb,116,303-309(2005)
[13]  marikaedoff,cigsthinfilmsolarcells,(uppsalauniversity,2005)
[14]  wolframwitte,robertkniese,michaelpowalla,ramaninvestigationsofcu(in,ga)se2thinfilmswithvariouscoppercontents,thinsolidfilms,517,867-869(2008)
[15]  philipjackson,rolandwürz,etal,highqualitybaselineforhighefficiencycu(in1-x,gax)se2solarcells,prog.photovolt.res.appl.,15,507–519(2007)
[16]  v.alberts,m.klenk,etal,phaseseparationandcompositionalchangesintwo-stage,thinsolidfilm,387,44-46(2001)
[17]  e.p.zaretskaya,v.f.gremenok,etal,ramanspectroscopyofcuinse2thinfilmspreparedbyselenization,journalofphysicsandchemistryofsolids,64,1989–1993(2003)
[18]  rschwarcz,makanehisa,etal,evolutionoframanspectraasafunctionoflayerthicknessinultra-thininsefilms,j.phys.:condens.matter,14,967–973(2002)
[19]  xuchuanming,xuxiaoliang,xujunetal,effectofstructureonramanspectraincu(in,ga)3se5thinfilms,chinesejournalofsemiconductors,25(11),1423-1428(2004)
[20]  (徐传明,许小亮,徐军等,cu(in,ga)3se5薄膜结构的raman研究,半导体学报,25(11),1423-1428(2004))

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133