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OALib Journal期刊
ISSN: 2333-9721
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锡催化生长氧化硅纳米线的制备和表征
Keywords: 无机非金属材料,氧化硅纳米线,化学气相沉积,碳热还原法,光致发光
Abstract:
？使用高纯sno2粉和石墨粉混合物作为锡催化剂的来源,硅片作为硅的来源和产物生长的基底,用化学气相沉积法在硅片上准备了有序排列的氧化硅纳米线组成的微米结构,用扫描电子显微镜(sem)、x--射线能谱仪(edx)、透射电子显微镜(tem)和选区电子衍射谱图(saed)对其进行了表征。结果表明:直径为5--15？μm,长度达到50--100μm的微米结构由紧密排列的非晶氧化硅纳米线组成,氧化硅纳米线的直径为100--200nm,长度达到50--100μm。根据对其生长过程的分析,锡催化生长表现出不同于传统的vls机制,一颗锡催化剂液滴能同时诱导多根纳米线的生长。根据室温下的光致发光谱分析,非晶氧化硅纳米线在395nm(3.14ev)处有一强峰,激发波长为260nm(4.77ev)。
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