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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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哑铃形碳化硅晶须生长的机理
Keywords: sic晶须,仿生,生长机理
Abstract:
？研究了仿生哑铃形碳化硅晶须的生长机理，发现组成仿生晶须的念珠状小球与直杆状碳化硅晶须的生成过程是相对独立的，而且念珠状小球在直杆状晶须上的生长位置是一定的。首先，直杆状碳化硅晶须在反应空间中生成；然后由si、sio、sio2等组成的非晶态物质在直杆状晶须上的缺陷位置沉积长大，形成包裹在晶须上的念珠状小球。念珠状小球不仅可以在制备碳化硅晶须的过程中生成，而且能够在已有的碳化硅和钛酸钾等晶须上生成。
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