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喷涂工艺参数对ha涂层结构和结晶度的影响

Keywords: 材料表面与界面,羟基磷灰石,微束等离子喷涂

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Abstract:

?用微束等离子喷涂在tial6v4基体上制备羟基磷灰石涂层,研究了喷涂电流、喷涂距离和气流量等参数对其显微结构和结晶度的影响.结果表明,通过调整喷涂工艺参数可获得三类不同结构的涂层.第一类结构含有大量未融化ha颗粒,第二类结构呈典型层状且具有强织构,第三类结构层状结构不明显.前两种结构的结晶度较高,第三类结构的结晶度较低.由二和三类结构复合而成的梯度涂层,能够适应植入体涂层快速形成类骨磷灰石和保持稳定性的双重要求.

References

[1]  1nakamuras,therolesofstructuralimperfectionsiningan-basedbluelight-emittingdiodesandlaserdiodes,science,281,956(1998)
[2]  2lesterss,poncefa,crafordmg,highdislocationdensitiesinhighefficiencygan-basedled,appl.phys.lett.,66,1249(1995)
[3]  3paucn,philipsmr,aimezv,carrierrecombina-tionnearthreadingdislocationsinganepilayersbylowvoltagecathodoluminescence,appl.phys.lett.,89,161905(2006)
[4]  4miragliapq,prebleea,roskowskiam,einfeldts,anddavisrf,helical-typesurfacedefectsinganthinfilmsepitaxiallygrownongantemplatesatreducedtempera-tures,j.cryst.growth,253,16(2003)
[5]  5heyingb,tarsaej,eisasscr,finip,denbaarssp.andspeckjs,dislocationmediatedsurfacemorphologyofgan,j.appl.phys.,85,6470(1999)
[6]  6hitoshis,sadahirok,takeyoshim,yoshihiros,masayukii,andseikohy,investigationofsurfacepitsoriginatingindislocationsinalgan/ganepitaxiallayergrownonsisubstratewithbufferlayer,jap.j.appl.phys.parti,45,2531(2006)
[7]  7chenh,feenstrarm,norhrupje,zywietzt,andneugebauer,spontaneousformationofindium-richnanos-tructuresoningan(0001)surfaces,j.phys.rev.lett.,85,1902(2000)
[8]  8dud,srolovitzdj,faceteddislocationsurfacepits,actamaterialia,52,3365(2004)
[9]  16koleskedd,wickendenae,henryrl,desistowj,andgormanrj.,growthmodelforganwithcom-parisontostructural,optical,andelectricalproperties,j.appl.phys.,84,1998(1998)
[10]  9michaelar,hadism,luminescencepropertiesofdefectsingan,j.appl.phys.,97,061301(2005)
[11]  10leih,leipnerhs,schreiberj,weyherjl,wosinskit,andgrzegoryi.,ramanandcathodoluminescencestudyofdislocationsingan,j.appl.phys.,92,6666(2002)
[12]  11kimc,kims,choiy,andleemsj,correlationbetweenthetypeofthreadingdislocationsandphotoluminescencecharacteristicsatdifferentdopingconcentrationsofsiinganfilms,j.appl.phys.,92,6343(2002)
[13]  12liujp,wangyt,yangh,jiangds,jahnu,ploogkh.,investigationsonv-defectsinquaternaryalinganepilayers,appl.phys.lett.,84,5449(2004)
[14]  13paucn,phillipsmr,aimezv,anddrouind.,carrierre-combinationnearthreadingdislocationsinganepilayersbylowvoltagecathodoluminescence,appl.phys.lett.,89,161905(2006)
[15]  14lisy,zhuj.,aldiffusioninganbufferlayerduringthegrowthofganfilm,j.cryst.growth,203,473(1999)
[16]  15fungs,xuxl,zhaoyw,sunwh,chenxd,sunnf,suntnandjiangcx.,gallium/aluminuminterdif-fusionbetweenn-ganandsapphire,j.appl.phys.,84,2355(1998)
[17]  17katoy,kitamuras,hiramatsuk,andsawakin.,selectivegrowthofwurtziteganandal_xga_(1-x)nongan/sapphiresubstratesbymetalorganicvaporphaseepitaxy,j.cryst.growth,144,133(19

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