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OALib Journal期刊
ISSN: 2333-9721
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超薄sio2层的化合态结构和厚度
Keywords: 无机非金属材料,超薄氧化硅,角分辨xps,快速热处理,固定表面正电荷
Abstract:
？用快速热处理对单面抛光硅片进行初始热氧化,800℃下在晶硅基表面制备出15,30和60min三个时间段的超薄氧化硅层。采用角分辨x射线光电子谱(ar--xps)技术分别分析了3种初始氧化硅层的厚度和化学组态。结果表明,这些氧化硅层的主要成分为sio2,在过渡区存在的si2o3、sio和si2o不饱和态的含量均小于5%。通过控制氧气的含量,使氧化厚度只与时间有关。氧化硅层主相sio2的厚度随时间改变分别为(4.1±0.4)nm,(6.2±0.6)nm和(9.6±0.5)nm。根据sio2与基底si的si2p峰的间距随掠射角度的变化,推断出厚度为4.1和6.2nm的sio2层内的固定正电荷导致n型si基体能带向上弯曲；而9.6nm的sio2层内的固定正电荷分布随着远离界面逐渐减小,表明固定正电荷主要分布在界面区附近。
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