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OALib Journal期刊
ISSN: 2333-9721
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铬掺杂钛酸锶钡陶瓷的介电调谐性能
Abstract:
？研究了cr掺杂对钛酸锶钡(ba0.6sr0.4tio3,bst)陶瓷的介电及其可调性能的影响.结果表明,少量的cr可进入bst品格形成固溶体,并促进晶粒生长.当cr掺杂量(摩尔分数)低于1.0%时,陶瓷的介电损耗急剧降低,调谐率明显提高,综合性能显著改善,其中cr掺杂0.6%的bst陶瓷具有最佳的综合性能,其在1mhz下的介电损耗为0.0005,品质因子(fom)达到500,而未掺杂样品的fom值仅为60.cr掺杂陶瓷损耗的急剧降低可归因于cr3+离子的还原和cr3+、cr2+受主行为中和了氧空位的施主行为.
| [1] | 2b.su,t.w.button,interactionsbetweenbariumstrontiumtitanate(bst)thickfilmsandaluminasubstrates,j.eur.ceram.soc,21,2777(2001)
|
| [2] | 3m.k.roy,c.kalmar,r.r.neurgaonkar,j.r.oliver,d.dewing,ahighlytunableradiofrequencyfilterusingbulkferroelectricmaterials,applicationsofferroelectrics,23-27,25(2004)
|
| [3] | 4yih-chienchen,longwu,cheng-lianghuang,yi-pingchou,yuan-tutsai.computersimulationofdirectcurrentfielddependenceofthedielectricconstantofal2o3-dopedbariumstrontiumtitanateintheparaelectricstate,jpn.j.appl.phys.,39,2690(2000)
|
| [4] | 12l.radhapiyari,o.p.thakur,c.prakash,structuralanddielectricpropertiesofthesystemba1-xsrxfe0.01ti0.99o3,mater.lett.,57(12),1824(2003)
|
| [5] | 13n.michiura,t.tatekawa,y.higuchi,roleofdonorandacceptorionsinthedielectriclosstangentof(zr0.8sn0.2)tio4dielectricresonatormaterial,j.am.ceram.soc,78(3),793(1995)
|
| [6] | 14colem.w.,hubbardc,ngoe.,structure-propertyrelationshipsinpureandacceptor-dopedba1-xsrxtio3thinfilmsfortunablemicrowavedeviceapplications,j.appl.phys.,92(1),477(2002)
|
| [7] | 1yuliu,a.s.nagra,e.g.erker,p.periaswamy,t.r.taylor,j.speck,r.a.york,basrtio3interdigitatedcapacitorsfordistributedphaseshifterapplications,ieeemicrowaveandguidedwavelett.,10(11),448(2000)
|
| [8] | 5s.b.hemer,f.a.selmi,v.v.varadan,v.k.varadan,theeffectofvariousdopantsonthedielectricpropertiesofbariumstrontiumtitanate,mater.lett.,15,317(1993)
|
| [9] | 6m.w.cole,p.c.joshi,m.h.ervin,m.c.wood,r.l.pfeffer,theinfluenceofmgdopingonthematerialspropertiesofba1-xsrxtio3thinfilmsfortunabledeviceapplications,thinsolidfilms,374(1),34(2000)
|
| [10] | 7k.b.chong,l.b.kong,l.chen,l.yan,c.y.tan,t.yang,c.k.ong,t.osipowicz,improvementofdielectriclosstangentofal2o3dopedba0.5sr0.5tio3thinfilmsfortunablemicrowavedevices,j.appl.phys.,95(3),1416(2004)
|
| [11] | 8m.h.lim,h.s.kim,n.y.kim,h.g.kim,i.d.kim,s.e.moon,m.h.kwak,h.c.ryu,s.j.lee,frequencyandvoltagedependentdielectricpropertiesofni-dopedba0.6sr0.4tio3thinfilms,j.electroceram.,13(1-3),239(2004)
|
| [12] | 9liangxiaofeng,wuwenbiao,mengzhongyan,dielectricandtunablecharacteristicsofbariumstrontiumtitanatemodifiedwithal2o3addition,mater.sci.eng.b.,99(1-3),366(2003)
|
| [13] | 10liangxiaofeng,mengzhongyan,wuwenbiao,effectofacceptoranddonordopantsonthedielectricandtunablepropertiesofbariumstrontiumtitanate,j.am.ceram.soc.,87(12),2218(2004)
|
| [14] | 11wulong,chenyih-chien,huangcheng-liang,chouyi-ping,tasiyuan-tu.direct-currentfielddependenceofdielectricpropertiesinalumina-dopedbariumstrontiumtitanate,j.am.ceram.soc,83(7),1713(2000)
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