OALib Journal期刊
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多层复合结构应变硅材料的生长和特性
Abstract:
?应用减压化学气相沉积技术,在弛豫si0.7ge0.3层/组分渐变si1-xgex层/si衬底这一多层复合结构的基础上制作了应变硅材料,其中组分渐变si1-xgex层ge的摩尔分数x从o线性增加到0.2.对该复合结构的性能进行了表征,由原子力显微镜和raman光谱测试结果计算出应变硅层的表面粗糙度和应变度分别为4.12nm和1.2%,材料中的位错密度为4×104cm-2.经受了高热开销过程后,应变硅层的应变度及其表面形貌基本上保持不变.
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