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OALib Journal期刊
ISSN: 2333-9721
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晶体面缺陷对fes2薄膜电学性能的影响
Abstract:
？采用fe膜热硫化技术制备了具有不同比表面积和比晶界面积的fes2薄膜,并测定其载流子浓度和电阻率,研究了fes2薄膜表面和晶界等面缺陷对fes2薄膜电学性能的影响.结果表明,表面和晶界两种面缺陷对fes2薄膜的电学性能有类似的影响规律.在一定范围内,随着薄膜比表面积和比晶界面积的增大,载流子浓度提高而电阻率下降.面缺陷数量的变化可导致fes2晶体中点缺陷数量、禁带中缺陷能级密度、不充分相变产物比例和相变应力水平的变化,从而导致载流子浓度和电阻率的变化.
| [1] | 1a.ennaoui,s.fiechter,ch.pettenkofer,n.alonso-vante,k.b■ker,h.tributsch,irondisulfideforsolarenergycon-version,solarenergymaterialsandsolarcells,29(4),289(1993)
|
| [2] | 2p.cervantes,z.slanic,f.bridges,e.knittle,q.williams,thebandgapandelectricalresistivityoffes_2-pyriteathighpressures,journalofphysicsandchemistryofsolids,63,1927(2002)
|
| [3] | 3c.delasheras,i.j.ferrer,c.r.sánchez,improvementsintheiropticalpropertiesbyannealingatdifferenttempera-tureinasulfureatmosphere,journalofappliedphysics,74(7),4551(1993)
|
| [4] | 4l.meng,y.h.liu,l.tian,structural,opticalandelectri-calpropertiesofpolycrystallinepyrite(fes_2)filmsob-tainedbythermalsulfurationofironfilms,journalofcrystalgrowth,253,530(2003)
|
| [5] | 5liuyanhui,mengliang,zhangxiujuan,effectofsubstratestructuresoncrystalorientationofthefes_2thinfilms,chinesejournalofmaterialsresearch,18(4),373(2004)(刘艳辉,孟亮,张秀娟,薄膜生长基底对fes_2晶体取向的影响,材料研究学报,18(4),373(2004))
|
| [6] | 7d.wan,y.wang,b.wang,c.ma,h.sun,l.wei,effectofthecrystalstructureonelectricalandopticalpropertiesofpyritefes_2preparedbythermallysulfurizingironfilms,journalofcrystalgrowth,253,230(2003)
|
| [7] | 8xiaoqi,qiuguanzhou,theoreticalstudyonthege-ometryandtheelectronicstructureoffes_2(100)surface,actaphysicasinica,51(9),2133(2002)(肖奇,邱冠周,fes_2(100)表面原子几何与电子结构的理论研究,物理学报,51(9),2133(2002))
|
| [8] | 9y.h.liu,l.meng,l.zhang,opticalandelectricalproper-tiesoffes_2thinfilmswithdifferentthicknesspreparedbysulfurizingevaporatediron,thinsolidfilms,479,83(2005)
|
| [9] | 10a.pascual,j.r.ares,i.j.ferrer,c.r.sánchez,electricalresistanceevolutionoffethinfilmsduringtheirsulphu-rationprocess,appliedsurfacescience,234,355(2004)
|
| [10] | 11a.hung,j.mus■t,i.yarovsky,s.p.russo,density-functionaltheorystudiesofpyritefes_2(100)and(110)surfaces,surfacescience,513,511(2002)
|
| [11] | 12m.bronold,y.tomm,w.jaegermann,surfacestatesofcubicd-bandsemiconductorpyrite(fes_2),surfacesci-enceletters,314,931(1994)
|
| [12] | 13j.cai,m.r.philpott,electronicstructureofbulkand(001)surfacelayersofpyritefes_2,computationalma-terialsscience,30,358(2004)
|
| [13] | 14m.balkanski,r.f.wallis,semiconductorphysicsandap-plications(oxford,oxforduniversitypress,2000)p.81
|
| [14] | 15n.takahashi,t.sawada,t.nakamur,t.nakamur,prepa-rationofpyritethinfilmsbyatmosphericpressurechemi-calvapordepositionusingfecl_3andch_3csnh_2,journalofmaterialschemistry,10,2346(2000)
|
| [15] | 16j.r.ares,a.pascual,i.j.ferrer,c.r.s'nchez,latticein-trinsicdefectsandelectricalresistivityinpyritethinfilms,thinsolidfilms,451,233(2004)
|
| [16] | 6liuyanhui,houling,fanduowang,wangyang,mengliang,propertiesofthefes_2filmssulfurizedfromtheprecursivefeandfe_3o_4,chinesejournalofmaterialsresearch,20(3),300(2006)(刘艳辉,侯玲,范多旺,汪洋,孟亮,fe和fe_3o_4硫化制备的fes_2薄膜的性能,材料研究学报,20(3),300(2006))
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