全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

热处理对电子束辐射固化环氧树脂的作用效果

Keywords: 环氧树脂,电子束,辐射固化,热处理,玻璃化

Full-Text   Cite this paper   Add to My Lib

Abstract:

?通过对热处理前后电子束辐射固化环氧树脂的动态力学分析,研究了不同样品的凝胶含量、tanδ以及动态模量的变化规律。结果表明,对电子束辐射固化的环氧树脂进行热处理,可以提高样品的固化程度和玻璃化温度(tg),热处理后样品的模量随着温度的升高而下降的幅度减少。随着辐射固化度的增加,热处理的影响减弱。当热处理温度超过辐射引发剂的热引发温度时,在样品的tanδ曲线上出现反应局部热交联网络的松弛峰。在辐射固化度相近的情况下,树脂体系中的引发剂含量和分子量对热处理的效果有重要影响。分子量分布多样性的环氧树脂体系在热处理后的固化程度、tg以及高温模量都较高。对于同样的环氧树脂体系,经过足够剂量的电子束辐射或进行适宜的热处理,所得固化物的tg和高温模量均优于热固化样品。

References

[1]  1nakamuras,therolesofstructuralimperfectionsiningan-basedbluelight-emittingdiodesandlaserdiodes,science,281,956(1998)
[2]  2lesterss,poncefa,crafordmg,highdislocationdensitiesinhighefficiencygan-basedled,appl.phys.lett.,66,1249(1995)
[3]  3paucn,philipsmr,aimezv,carrierrecombina-tionnearthreadingdislocationsinganepilayersbylowvoltagecathodoluminescence,appl.phys.lett.,89,161905(2006)
[4]  4miragliapq,prebleea,roskowskiam,einfeldts,anddavisrf,helical-typesurfacedefectsinganthinfilmsepitaxiallygrownongantemplatesatreducedtempera-tures,j.cryst.growth,253,16(2003)
[5]  5heyingb,tarsaej,eisasscr,finip,denbaarssp.andspeckjs,dislocationmediatedsurfacemorphologyofgan,j.appl.phys.,85,6470(1999)
[6]  6hitoshis,sadahirok,takeyoshim,yoshihiros,masayukii,andseikohy,investigationofsurfacepitsoriginatingindislocationsinalgan/ganepitaxiallayergrownonsisubstratewithbufferlayer,jap.j.appl.phys.parti,45,2531(2006)
[7]  7chenh,feenstrarm,norhrupje,zywietzt,andneugebauer,spontaneousformationofindium-richnanos-tructuresoningan(0001)surfaces,j.phys.rev.lett.,85,1902(2000)
[8]  10leih,leipnerhs,schreiberj,weyherjl,wosinskit,andgrzegoryi.,ramanandcathodoluminescencestudyofdislocationsingan,j.appl.phys.,92,6666(2002)
[9]  11kimc,kims,choiy,andleemsj,correlationbetweenthetypeofthreadingdislocationsandphotoluminescencecharacteristicsatdifferentdopingconcentrationsofsiinganfilms,j.appl.phys.,92,6343(2002)
[10]  12liujp,wangyt,yangh,jiangds,jahnu,ploogkh.,investigationsonv-defectsinquaternaryalinganepilayers,appl.phys.lett.,84,5449(2004)
[11]  8dud,srolovitzdj,faceteddislocationsurfacepits,actamaterialia,52,3365(2004)
[12]  9michaelar,hadism,luminescencepropertiesofdefectsingan,j.appl.phys.,97,061301(2005)
[13]  13paucn,phillipsmr,aimezv,anddrouind.,carrierre-combinationnearthreadingdislocationsinganepilayersbylowvoltagecathodoluminescence,appl.phys.lett.,89,161905(2006)
[14]  14lisy,zhuj.,aldiffusioninganbufferlayerduringthegrowthofganfilm,j.cryst.growth,203,473(1999)
[15]  15fungs,xuxl,zhaoyw,sunwh,chenxd,sunnf,suntnandjiangcx.,gallium/aluminuminterdif-fusionbetweenn-ganandsapphire,j.appl.phys.,84,2355(1998)
[16]  16koleskedd,wickendenae,henryrl,desistowj,andgormanrj.,growthmodelforganwithcom-parisontostructural,optical,andelectricalproperties,j.appl.phys.,84,1998(1998)
[17]  17katoy,kitamuras,hiramatsuk,andsawakin.,selectivegrowthofwurtziteganandal_xga_(1-x)nongan/sapphiresubstratesbymetalorganicvaporphaseepitaxy,j.cryst.growth,144,133(19

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133