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OALib Journal期刊
ISSN: 2333-9721
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高度(002)择优取向li+掺杂zno薄膜的制备和性能
Abstract:
？制备了不同摩尔浓度li+掺杂zno-li0.022陶瓷靶、并用rf射频磁控溅射工艺在si(100)基片上制备zno薄膜,研究了溅射温度、氧分压和溅射功率等对zno薄膜微结构、表面形貌和择优取向的影响.结果表明:li+的最佳掺杂量(摩尔分数)为2.2%,rf溅射的最佳基片温度ts小于300℃,氩氧气氛体积比为ar:o2=20:5,溅射功率50～60w;制备出的zno薄膜高度c轴(002)择优取向、均匀、致密,其绝缘电阻率ρ为4.12×108ω·cm,满足研制声表面波器件(saw)的要求.
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