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OALib Journal期刊
ISSN: 2333-9721
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溅射及rta处理对ito薄膜特性的影响
Abstract:
？采用rf-磁控溅射生长铟锡氧化物薄膜(ito),研究了生长条件、快速热退火(rta)温度对薄膜的晶化情况、透过率、电导率以及表面形貌的影响.结果表明:改变in2-x3+(snx4+·e)o3制备过程中的氧含量使sn4+·e对电子束缚能力发生变化,过高的氧分压使费米能级ef降低,功函数ws增大,氧气流量为2ml/min、退火温度为450℃时薄膜电阻率最低为2.5×10-4ω·cm,透过率达88%以上.
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