OALib Journal期刊
ISSN: 2333-9721
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磁头表面含氟三氯硅烷自组装膜的生长机理
Abstract:
?在磁头表面制备了1h,1h,2h,2h-四氢全氟辛烷基三氯硅烷(fots)自组装膜,采用x射线光电子能谱仪(xps)、时间飞行二次离子质谱仪(tof-sims)、接触角测量仪和原子力显微镜(afm)对fots自组装膜进行表征,研究了自组装膜的生长机理.结果表明,fots自组装膜的生长经过了亚单层膜的低等覆盖、亚单层膜的中等覆盖、团聚和聚结四个阶段.其中第一层和第二层自组装膜的亚单层膜形态和生长方式不同,第一层的亚单层膜呈岛状,岛的生长是自身向外扩展;第二层的亚单层膜呈簇状,簇通过数量增加来实现生长.超薄完整的单层fots自组装膜(膜厚为0.8nm、ra为0.125nm)能使磁头表面的接触角值增加,疏水性能提高.
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