OALib Journal期刊
ISSN: 2333-9721
费用:99美元
|
|
|
tin薄膜的循环制备和电学性质
Keywords: 金属材料,tin,mocvd,等离子体处理
Abstract:
?用金属有机物化学气相淀积(metalorganicchemicalvapordeposition,mocvd)制备了tin薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了tin薄膜的电学性质.结果表明,多次循环会引入界面而增大电阻率,与薄膜成分和微结构分析的结果一致.得到了单循环的最优厚度以使样品电阻率最低.通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(via)直径越小,tin薄膜对介窗电阻的影响越大.
References
[1] | 2a.c.westerheim,j.m.bulger,c.s.whelan,t.s.sriram,l.j.elliott,j.j.maziarz,j.vac.sci.technol.b,16(5),2729(1998)
|
[2] | 4v.melnik,d.wolanski,e.bugiel,a.goryachko,s.chernjavski,d.kruger,materialsscienceandengineeringb,102,358(2003)
|
[3] | 6s.riedel,s.e.schulz,t.gessner,microelectronicengineering,50,533(2000)
|
[4] | 9s.ikeda,j.palleau,j.torres,b.chenevier,n.bourhila,r.madar,journalofappliedphysics,86(4),2300(1999)
|
[5] | 1stephena.campbell,thescienceandengineeringofmicroelectronicfabrication(beijing,publishinghouseofelectronicsindustry,beijing,2003)p.348
|
[6] | 3ju-yongyun,shi-woorhee,thinsolidfilms,320,163(1998)
|
[7] | 5s.ikeda,j.palleau,j.torres,b.chenevier,n.bourhila,r.madar,solid-stateelectronics,43,1063(1999)
|
[8] | 7r.kroger,m.eizenberg,c.marcadal,l.chen,j.appl.phys.,91(8),5149(2002)
|
[9] | 8j.k.lan,y.l.wang,k.y.lo,c.p.liu,c.w.liu,j.k.wang,y.l.cheng,c.g.chau,thinsolidfilms,398~399,544(2001)
|
[10] | 10a.sabbadini,f.cazzaniga,s.alberici,c.bresolin,g.casati,v.cusi,g.pavia,g.querolo,microelectronicengineering,55,205(2001)
|
[11] | 11leewardyi,wenjiezhang,jinwu,dulimao,semicond.sci.technol.,21,250(2006)
|
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|