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原位合成mosi2-sic复合材料700℃的氧化行为

Keywords: 材料失效与保护,mosi2-sic复合材料,原位合成,低温氧化行为,pest现象

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Abstract:

?研究了不同sic体积分数原位合成mosi2-sic复合材料在700℃空气中1000h的长期氧化行为。结果表明:复合材料氧化1000h后,均未发生pest现象。复合材料的氧化抗力明显好于单一mosi2,原位合成复合材料的氧化抗力好于传统的热压商用mosi2粉末和sic粉末混合物制备的复合材料(外加复合材料)。复合材料氧化膜相组成仅为非晶sio2,材料的氧化过程主要是o2与mosi2的作用,sic未发生氧化。材料在700℃下仍发生硅、钼的同时氧化,因moo3的挥发较快没有晶须形成,因而在材料表面快速形成一薄层连续、致密的非晶sio2保护膜,使材料表现出优异的长期抗氧化性。

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