OALib Journal期刊
ISSN: 2333-9721
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二硫化钼的电子输运与器件
DOI: 10.13232/j.cnki.jnju.2014.03.006
Keywords: 二硫化钼,电子输运,器件应用,二维过渡金属二硫属化物
Abstract:
二硫化钼具有与石墨烯类似的二维层状结构,因其宽禁带、无悬挂键等特性,在以晶体管为代表的逻辑器件领域有广泛的应用;另外,单层二硫化钼为直接带隙半导体,在光电器件中应用也逐渐引起研究人员的关注。本文综述了近期基于二硫化钼晶体管器件电子输运研究、及其在电子、光电器件领域研究进展;除此,对于二维过渡金属二硫属化物中诸如二硫化钨、二硒化钨在器件方面应用也进行了简单的讨论。
References
[1] | wangqh,zadehkk,kisa,etal.electronicsandoptoelectronicsoftwo-dimensionaltransitionmetaldichalcogenides.naturenanotechnology,2012,7:699~712.
|
[2] | http://en.wikipedia.org/wiki/molybdenum_disulfide.
|
[3] | kuca,zibouchen,heinet.influenceofquantumcon?nementontheelectronicstructureofthetransitionmetalsufidets2.physicalreviewb,2011,83:245213~245216.
|
[4] | zhuzy,chengyc,schwingenschloglu.giantspin-orbit-inducedspinsplittingintwo-dimensionaltransition-metaldichalcogenidesemiconductors.physicalreviewb,2011,84:153402~153406.
|
[5] | novoselovks,jiangd,schedinf,etal.two-dimensionalatomiccrystals.proceedingsofthenationalacademyofsciencesoftheunitedstatesofamerica,2005,102:10451~10453.
|
[6] | qiuh,panl,yaoz,etal.electricalcharacterizationofback-gatedbi-layermos2field-effecttransistorsandtheeffectofambientontheirperformances.appliedphysicsletters,2012,100:123104~123106.
|
[7] | parkw,parkj,jangj,etal.oxygenenvironmentalandpassivationeffectsonmolybdenumdisulfidefieldeffecttransistors.nanotechnology,2013,24:095202~095206.
|
[8] | baow,caix,kimd,etal.highmobilityambipolarmos2field-effecttransistors:substrateanddielectriceffects.appliedphysicsletters,2013,102:042104~042107.
|
[9] | radisavljevicb,kisa.mobilityengineeringandametal?insulatortransitioninmonolayermos2.naturematerials,2013,12:815~820.
|
[10] | zhangyj,yejt,yomogiday.formationofastablep?njunctioninaliquid-gatedmos2ambipolartransistor.nanoletters,2013,13:3023~3028.
|
[11] | hwangws,remskarm,yanr,etal.transistorswithchemicallysynthesizedlayeredsemiconductorws2exhibiting105roomtemperaturemodulationandambipolarbehavior.appliedphysicsletters,2012,101:013107~013110.
|
[12] | huangj,puj,hsuc,etal.large-areasynthesisofhighlycrystallinewse2monolayersanddeviceapplications.acsnano,2014,8:923~930.
|
[13] | radisavljevicb,radenovica,brivioj,etal.single-layermos2transistors.naturenanotechnology,2011,6:147~150.
|
[14] | colemanjn,lotyam,oneilla,etal.two-dimensionalnanosheetsproducedbyliquidexfoliationoflayeredmaterials.science,2011,331:568~571.
|
[15] | makkf,hek,shanj,etal.controlofvalleypolarizationinmonolayermos2byopticalhelicity.naturenanotechnology,2012,7:494~498.
|
[16] | zengh,daij,yaow,etal.valleypolarizationinmos2monolayersbyopticalpumping.naturenanotechnology,2012,7:490~493.
|
[17] | caot,wangg,hanw,etal.valley-selectivecirculardichroismofmonolayermolybdenumdisulphide.naturecommunications,2012,3:887~891.
|
[18] | wangxr,shiy,zhangr.field-effecttransistorsbasedontwo-dimensionalmaterialsforlogicapplications.chinesephysicsb,2013,22:098505~098519.
|
[19] | liul,luy,guoj.onmonolayermos2field-effecttransistorsatthescalinglimit.ieeetransactionsonelectrondevice,2013,60:4133~4139.
|
[20] | dass,chenh,penumatchaav,etal.highperformancemultilayermos2transistorswithscandiumcontacts.nanoletters,2013,13:100~105.
|
[21] | kims,konara,hwangw,etal.high-mobilityandlow-powerthin-filmtransistorsbasedonmultilayermos2crystals.naturecommunications,2012,3:1011-1017.
|
[22] | kaasbjergk,thygesenks,jacobsenkw.phonon-limitedmobilityinn-typesingle-layermos2fromfirstprinciples.physicalreviewb,2012,85:115317~115332.
|
[23] | wangh,yul,leey,etal.integratedcircuitsbasedonbilayermos2transistors.nanoletters,2012,12:4674~4680.
|
[24] | ghataks,palan,ghosha.natureofelectronicstatesinatomicallythinmos2field-effecttransistors.acsnano,2011,5:7707~7712.
|
[25] | lis,wakabayashik,xuy,etal.thickness-dependentinterfacialcoulombscatteringinatomicallythinfield-effecttransistors.nanoletters,2013,13:3546~3552.
|
[26] | jint,kangj,kimes,etal.suspendedsingle-layermos2devices.journalofappliedphysics,2013,114:164509~164512.
|
[27] | liud,guoy,fangl,etal.sulfurvacanciesinmonolayermos2anditselectricalcontacts.appliedphysicsletters,2013,103:183113~183116.
|
[28] | zhouw,zoux,najmaeis,etal.intrinsicstructuraldefectsinmonolayermolybdenumdisulfide.nanoletters,2013,13:2615~2622.
|
[29] | ghataks,ghosha.observationoftrap-assistedspacechargelimitedconductivityinshortchannelmos2transistor.appliedphysicsletters,2013,103:122103~122106.
|
[30] | qiuh,xut,wangz.hoppingtransportthroughdefect-inducedlocalizedstatesinmolybdenumdisulphide.naturecommunications,2013,4:2642~2647.
|
[31] | yejt,zhangyj,akashir,etal.superconductingdomeinagate-tunedbandinsulator.science,2012,338:1193~1196.
|
[32] | chojh,leej,hey,etal.high-capacitanceiongelgatedielectricswithfasterpolarizationresponsetimesfororganicthinfilmtransistors.advancedmaterials,2008,20:686~690.
|
[33] | sunqq,liyj,hejl,etal.thephysicsandbackwarddiodebehaviorofheavilydopedsinglelayermos2basedpnjunctions.appliedphysicsletters,2013,102:093104~093106.
|
[34] | chenm,namh,wis,etal.stablefew-layermos2rectifyingdiodesformedbyplasma-assisteddoping.appliedphysicsletters,2013,103:142110~142113.
|
[35] | tanz,tianh,fengt,etal.asmall-signalgeneratorbasedonamulti-layergraphene/molybdenumdisulfideheterojunction.appliedphysicsletters,2013,103,263506~263508.
|
[36] | radisavljevicb,whitwickmb,kisa.small-signalamplifierbasedonsingle-layermos2.appliedphysicsletters,2012,101:043103~043106.
|
[37] | yuwj,liz,zhouh,etal.verticallystackedmulti-heterostructuresoflayeredmaterialsforlogictransistorsandcomplementaryinverters.naturematerials,2013,12:246~252.
|
[38] | yinz,lih,lih,etal.single-layermos2phototransistors.acsnano,2012,6:74~80.
|
[39] | sanchezo,lembked,kaycim,etal.ultrasensitivephotodetectorsbasedonmonolayermos2.naturenanotechnology,2013,8:497~501.
|
[40] | yuwj,liuy,zhouh,etal.highlyefficientgate-tunablephotocurrentgenerationinverticalheterostructuresoflayeredmaterials.naturenanotechnology,2013,8:952~958.
|
[41] | splendiania,sunl,zhangy,etal.emergingphotoluminescenceinmonolayermos2.nanoletters,2010,10:1271~1275.
|
[42] | edag,yamaguchih,voiryd,etal.photoluminescencefromchemicallyexfoliatedmos2.nanoletters,2011,11:5111~5116.
|
[43] | tongays,zhouj,atacac,etal.broad-rangemodulationoflightemissionintwo-dimensionalsemiconductorsbymolecularphysisorptiongating.nanoletters,2013,13:2831~2836.
|
[44] | carladousa,coratgerr,ajustronf,etal.lightemissionfromspectralanalysisofau/mos2nanocontactsstimulatedbyscanningtunnelingmicroscopy.physcialreviewb,2002,66:045401~045408.
|
[45] | sundaramrs,engelm,lombardoa,etal.electroluminescenceinsinglelayermos2.nanoletters,2013,13,1416~1421.
|
[46] | podzorovv,gershensonme,klocch,etal.high-mobilityfield-effecttransistorsbasedontransitionmetaldichalcogenides.appliedphysicsletters,2004,84:3301~3303.
|
[47] | kangj,tongays,zhouj,etal.bandoffsetsandheterostructuresoftwo-dimensionalsemiconductors.appliedphysicsletters,2013,102:012111~012114.
|
[48] | dass,appenzellerj.wse2fieldeffecttransistorswithenhancedambipolarcharacteristics.appliedphysicsletters,2013,103:103501~103505.
|
[49] | radisavljevicb,whitwickmb,kisa.integratedcircuitsandlogicoperationsbasedonsingle-layermos2.acsnano,2011,5:9934~9938.
|
[50] | lopezn,eliasal,berkdemira,etal.photosensordevicebasedonfew-layeredws2films.advancedfunctionalmaterials,2013,23:5511~5517.
|
[51] | peimyoon,shangj,congc,etal.nonblinking,intensetwo-dimensionallightemitter:monolayerws2triangles.acsnano,2013,7:10985~10994.
|
[52] | polmana,atwaterha.photonicdesignprinciplesforultrahigh-efficiencyphotovoltaics.naturematerials,2012,11:174~177.
|
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