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Multilayer Inorganic Electrets with and Layers for Applications on Heated Machinery

DOI: 10.1155/2012/904168

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Abstract:

The physics and basic properties of electrets are discussed, namely, what happens during corona charging of dielectrics, why the surface potential and trapped charge show certain limits, where the trapped charge is stored, why and how the charge is released from traps at high temperatures. The experiments have been conducted on single-layer SiO2 and Si3N4 and on multilayer combination of these materials. A strong lateral mobility of charge trapped near the SiO2/Si3N4 interface was observed at elevated temperatures. The positively and negatively charged electrets are compared to each other. The experiments on charge retention at elevated temperatures have shown the studied electrets are suitable for devices working at temperatures of up to 200–300°C. 1. Introduction Electrets could serve as a quasipermanent source of polarization in emerging applications like electrostatic energy harvesters [1]. This would allow autonomous devices powered by energy harvesters in applications, where temperatures of up to 200–300°C are observed and, thus, batteries cannot be used as a source of power. Electrets also used, or can be used, in other applications, for example, sensors, transducers, and electrostatic microbearings and micromotors [2, 3]. The inorganic electrets composed of at least one SiO2 layer and one Si3N4 layer show superior charge retention at elevated temperatures. However, the physics of electrets is not understood well enough at this moment. For example, attempts to pattern them result in instability of trapped charge at small feature size of a pattern [3]. It is obvious that better understanding of the processes occurring during and after electret charging, influence of atmospheric ions and fringing field [4], effects of temperature [4–7], and humidity and relevant surface conduction [3, 8, 9] on charge retention is necessary. It would allow designing better microdevices with electrets suitable for the market with its requirements for the long lifetime of electrets (and therefore the devices), small feature size of photolithographic pattern, and the extended temperature range in applications. This research is primarily targeted at development of electrostatic energy harvesters. They must be able to work for at least 10 years in applications with temperatures of 150–200°C and survive occasional short overheating to about 300°C. Therefore, organic electrets that discharge at much lower temperatures are not suitable for the application. The single-layer electrets dramatically discharge at 300°C either [4, 10]. Therefore, the only remaining option in this

References

[1]  E. Halvorsen, E. R. Westby, S. Husa et al., “An electrostatic energy harvester with electret bias,” in Proceedings of the 15th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '09), pp. 1381–1384, Denver, Colo, USA, June 2009.
[2]  Y. Tsurumi, Y. Suzuki, and N. Kasagi, “Non-contact electrostatic micro-bearing using polymer electret,” in Proceedings of the IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS '08), pp. 511–514, Tucson, Ariz, USA, January 2008.
[3]  T. Genda, S. Tanaka, and M. Essashi, “High power electrostatic motor with micropatterned electret on shrouded turbine,” in Proceedings of the The 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), vol. 1, pp. 709–712, Seoul, Korea, June 2005.
[4]  V. Leonov and R. van Schaijk, “Patterning of inorganic electrets,” IEEE Transactions on Dielectrics and Electrical Insulation, vol. 17, no. 4, pp. 994–1000, 2010.
[5]  X. Zhang and G. M. Sessler, “Charge transport in silicon nitride/silicon oxide double layers,” in Proceedings of the 11th International Symposium on Electrets, pp. 122–125, Melbourne, Australia, October 2002.
[6]  V. Leonov, P. Fiorini, and C. Van Hoof, “Rapid corona charging and stability of positive charge stored in SiO2/Si3N4 electrets,” in Proceedings of the 12th International Symposium on Electrets (ISE '05), pp. 352–355, Bahia, Brazil, September 2005.
[7]  V. Leonov, P. Fiorini, and C. Van Hoof, “Stabilization of positive charge in SiO2/Si3N4 electrets,” IEEE Transactions on Dielectrics and Electrical Insulation, vol. 13, no. 5, pp. 1049–1056, 2006.
[8]  H. Yanazawa, H. Utsugi, N. Hashimoto, and M. Ashikawa, “Hydrophobic conversion of the chemical-vapor-deposited SiO2 surface,” vol. 2, supplement 1-2, pp. 753–756, 1974.
[9]  J. A. Voorthuyzen, K. Keskin, and P. Bergveld, “Investigations of the surface conductivity of silicon dioxide and methods to reduce it,” Surface Science, vol. 187, no. 1, pp. 201–211, 1987.
[10]  V. Leonov, C. van Hoof, G. Altena, M. Goedbloed, and R. van Schaijk, “Electret patterning technologies for microsystems,” in Proceedings of the 4th European Conference on Smart Systems Integration Conference, VDE Verlag GmbH, Como, Italy, March 2010, T. Gessner, Ed., paper 35.
[11]  H. Aozasa, I. Fujiwara, A. Nakamura, and Y. Komatsu, “Analysis of carrier traps in Si3N4 in oxide/nitride/oxide for metal/oxide/nitride/oxide/silicon nonvolatile memory,” Japanese Journal of Applied Physics A, vol. 38, no. 3, pp. 1441–1447, 1999.
[12]  T. T. H. Kim, I. H. Park, J. D. Lee, H. C. Shin, and B. G. Park, “Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide- silicon structure at elevated temperatures,” Applied Physics Letters, vol. 89, no. 6, Article ID 063508, 2006.
[13]  H. Aozasa, I. Fujiwara, and Y. Kamigaki, “Analysis of carrier traps in silicon nitride film with discharge current transient spectroscopy, photoluminescence, and electron spin resonance,” Japanese Journal of Applied Physics A, vol. 46, no. 9, pp. 5762–5766, 2007.
[14]  J. U. Lee, K. S. Roh, G. C. Kang et al., “Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices,” Applied Physics Letters, vol. 91, no. 22, Article ID 223511, 3 pages, 2007.
[15]  X. Zhang and G. M. Sessler, “Charge dynamics in silicon nitride/silicon oxide double layers,” Applied Physics Letters, vol. 78, no. 18, pp. 2757–2759, 2001.
[16]  P. Gunther, “Determination of charge density and charge centroid location in electrets with semiconducting substrates,” IEEE Transactions on Electrical Insulation, vol. 27, no. 4, pp. 698–701, 1992.
[17]  P. Günther and Z. Xia, “Transport of detrapped charges in thermally wet grown SiO2 electrets,” Journal of Applied Physics, vol. 74, no. 12, pp. 7269–7274, 1993.
[18]  Y. Pan, Z. Xia, X. Zhang, and Y. Zhang, “Charge storage characteristic for double layer of Si3N4/SiO2 and single layer of Si3N4,” in Proceedings of the 10th International Symposium on Electrets (ISE '99), pp. 391–394, Athens, Greece, September 1999.
[19]  M. Lenzlinger and E. H. Snow, “Fowler-nordheim tunneling into thermally grown SiO2,” Journal of Applied Physics, vol. 40, no. 1, pp. 278–283, 1969.
[20]  V. Leonov, M. Goedbloed, R. van Schaijk, and C. van Hoof, “Multilayer electrets for vibration energy harvesting at extremely high temperatures,” in Proceedings of the 5th European Conference Smart Systems Integration (SSI '11), VDE Verlag GmbH, Dresden, Germany, March 2011, T. Gessner, Ed., paper 21.
[21]  V. Leonov, “Patterned electret structures and methods for manufacturing patterned electret structures,” Patent applications WO 2010/029161, US 2011/0163615 (Patent pending).

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