H H Huston,C P Clarke.Reliability defect detection and screening during processing:theory and implementation.In Proceedings of 30th International Reliability Physics Symuposium.San Diego,CA,1992.268-275.
[2]
J Vander Pol,F Kuper,E Ooms.Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit fit and ppm reliability era[J].Microelectronics Reliability,1996,36(11):1603-1610.
[3]
J Vander Pol,E Ooms,T Hof,F Kuper.Impact of screening of latent defects at electrical test on yield-reliability relation and application to burn-in elimiation.In Proceedings of 36th International Reliability Physics Symuposium.Reno,NV,1998.370-377.
[4]
Kyungmee O Kim,Way Kuo,Wen Luo.A relation model of gate oxide yield and reliability[J].Microelectronics Reliability,2004,44(3):425-434.
[5]
F Kuper,J Vander Pol,E Ooms,T Johnson,R Wijburg.Relation between yield and reliability of integrated circuits:experimentalresults and application to continuous early failure rate reduction programs.In Proceedings of 34th International Reliability Physics Symuposium.Dallas,TX,USA,1996.17-21.
[6]
T Kim,W Kuo.Modeling manufacturing yield and reliability[J].IEEE Transactions on Semiconductor Manufacturing,1999,12(4):485-492.
[7]
郝跃,荆明娥,马佩军.VLSI集成电路参数成品率及优化研究进展[J].电子学报,2003,31(12):1971-1974. HAO Yue,JING Ming-e,MA Pei-jun.State of the art on study of parametric yield and its optimization for VLSI[J].Acta Electronica Sinica,2003,31(12):1971-1974.(in Chinese)
[8]
Kyungmee O Kim,Hee-Seok Oh.Reliability functions estimated from commonly used yield model[J].Microelectronics Reliability,2008,48(3):481-489.
[9]
赵天绪,段旭朝,郝跃.基于制造成品率模型的集成电路早期可靠性估计[J].电子学报,2005,33(11):1966-1968. ZHAO Tian-xu,DUAN Xu-chao,HAO Yue.Estimation of early-life reliability based on integrated-circuit yield model [J].Acta Electronica Sinica,2005,33(11):1966-1968.(in Chinese)
[10]
J R Black.Electromigration failure modes in aluminum metallization for semiconductor devices[J].Proceedings of the IEEE,1969,57(9):1587-1594.
[11]
赵天绪,段旭朝,郝跃.集成电路互连线寿命的工艺缺陷影响分析[J].计算机学报,2006,29(2):227-232. ZHAO Tian-xu,DUAN Xu-chao,HAO Yue.Analysis to interconnect lifetime affected by integrated circuit manufacturing defect[J].Chinese Journal of Computers,2006,29(2):227-232.(in Chinese)
