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电子学报  2013 

大电流负载的片上LDO系统设计

DOI: 10.3969/j.issn.0372-2112.2013.07.029, PP. 1431-1435

Keywords: 瞬态响应,相位裕度,快速响应,低压差,大电流负载

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Abstract:

本文分析了传统大电流负载的LDO(Low-dropoutRegulator)系统实现系统稳定性和瞬态响应提高的局限性,在此基础上,提出了一种片内集成的瞬态响应提高技术.此技术无需外挂电容和等效串联电阻(EquivalentSeriesResistor,ESR),即能使系统在全负载范围内保持稳定性和良好的纹波抑制能力.仿真结果表明,系统空载时,静态电流为64μA,且最大能提供800mA的负载电流,1KHz时的电源抑制比达到-60dB,当负载电流以800mA/5μs跳变时,最大下冲电压为400mV,上冲电压为536mV,恢复时间分别只需6.7μs和12.8μs,版图面积约为0.64mm2.

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