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电子学报  2014 

接触电阻和扭距序列作用下CICC耦合损耗模型

DOI: 10.3969/j.issn.0372-2112.2014.05.018, PP. 953-957

Keywords: 接触电阻,扭距序列比,管内电缆导体,耦合损耗

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Abstract:

国际热核试验反应堆ITER和国内今后要建造的聚变工程实验堆CFETR上的CICC导体,将运行在大电流快速励磁的瞬变复杂磁场中,这使得中心螺线CS磁体上的导体会遭受10T以上的磁场冲击,目前已采用铌三锡(Nb3Sn)材料,但应变对Nb3Sn导体临界性能退化作用的研究还在探索中,同时更缺乏导体绞缆级扭距序列和股线接触特性对耦合损耗影响的实验分析研究.为此,在周期载荷模拟应变情况下,开展了不同扭距序列和导体接触电阻对耦合损耗作用的探索.研究分析表明,相对于经典耦合损耗和频谱损耗计算模型,由导体扭距序列比和接触电阻作用组合分析模型,计算获得的耦合损耗误差较小,与测试值最接近.结果显示采用扭距序列比和接触电阻组合的计算方法能取得较满意效果.

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