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电子学报  2013 

基于Savitzky-Golay滤波器的MOSFET阈值电压提取技术

DOI: 10.3969/j.issn.0372-2112.2013.11.020, PP. 2242-2246

Keywords: 金属氧化物半导体场效应晶体管,阈值电压,测量涨落,Savitzky-Golay滤波器

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Abstract:

MOS(Matel-Oxide-Semiconductor)器件阈值电压提取过程中的一些求导运算放大了测量数据中所包含的涨落因素(噪声和测量错误),使阈值电压提取过程变得不稳定.本文采用Savitzky-Golay低通滤波算法,求导运算和滤波过程同时进行,有效地抑制了测量数据中的涨落.再结合目标曲线峰值附近局域匹配系数判据,阈值电压提取过程就可以稳定且自动地完成,这为MOSFET(MOSField-EffectTransistor)特性分析及集成电路设计工作带来很大方便.

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