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含能材料  2015 

(B/Ti)n/TaN薄膜点火桥的制备及点火性能

DOI: 10.11943/j.issn.1006-9941.2015.03.012

Keywords: 磁控溅射 (B/Ti)n/TaN膜桥 TaN膜桥 B/Ti多层膜

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Abstract:

利用磁控溅射与微细加工技术, 将B/Ti多层膜沉积在TaN模桥制备了(B/Ti)n/TaN薄膜点火桥(膜桥), 其中TaN膜桥的尺寸为80 μm×40 μm×2 μm, B/Ti多层膜尺寸为4 mm×4 mm, 层数为40层, 第一层B厚度400 nm, 其后每层B或Ti厚度为200 nm, 总厚度约8 μm。用电压40 V、电容47 μF的钽电容对样品进行发火性能测试。结果表明:TaN膜桥的点火延迟时间为85 μs、点火输入能量15 mJ、爆炸温度2500~3500 K、火焰持续时间0.15 ms左右、炸药持续高度5 mm左右, 而(B/Ti)n/TaN膜桥的点火延迟时间为37 μs、点火输入能量6 mJ、爆炸温度4000~8500 K、火焰持续时间大于0.25 ms、火焰持续高度10 mm以上。在点火桥上沉积B/Ti多层膜可降低点火延迟时间和点火输入能量, 有效提升火工品的点火性能

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