Kim J, Navn K S, Jungling K C. Plamm electron density generated by a semiconductor bridge as a function of input energy andlandmateria1. IEEE Transactions on Electron Devices, 1997, 44(6): 1022-1026
[2]
Ewick David W, Walsh Brendan M. Optimization of the Bridge/Powder Interface for a Low Energy SCB device, 97-2831[R]， 1997.
[3]
Msrtinze M J, Baer M R. Microconvective heating of granular explosives by a semiconductor bridge. SAND89-2033(DE90-005710)[R].
[4]
Kye-Nam Lee, Myung-Ⅱ Park, Sung-Ho Choi, et al. Characteristics of plasma generated by polysilicon semiconductor bridge(SCB)[J]. Sensors and Actuators A, 2002(96): 252-257.
[5]
Myung-Ⅱ Park, Hyo-Tae Choo, Suk-Hwan Yoon. Comparison of plasma generation behaviors between a single crystal semiconductor bridge(single-SCB) and a polysilicon semiconductor bridge(poly-SCB)[J]. Sensors and Actuators A, 2004(115): 104-108.
[6]
刘明芳, 张小兵. 半导体桥点火模型的建立及数值模拟[J]. 火炸药学报, 2008 31(5): 87-90. LIU Ming-fang, ZHANG Xiao-bing. Establishment of semiconductor bridge ignition method and its numerical simulation[J]. Chinese Journal of Explosives and Propellants, 2008 31(5): 87-90.
[7]
冯红艳, 朱顺官, 张琳, 等. 原子发射光谱双谱线法测量SCB等离子体温度[J]. 含能材料, 2007 15(2): 134-136. FENG Hong-yan, ZHU Shun-guan, ZHANG Lin, et al. Measurement of the semiconductor bridge(SCB) plasma temperature by the double line of atomic emission spectroscopy[J]. Chin J Energ Mater, 2007 15(2): 134-136.
[8]
Ewick David W, Walsh Brendan M. Optimization of the Bridge/Powder Interface for a Low Energy SCB device[R]， 97-2831: 1997.
[9]
MA Peng, ZHANG Lin, ZHU Shunguan, et al. Non-plasma ignition of lead styphnate by a semiconductor bridge and its comparison with plasma ignition[J]. Combustion, Explosion, and Shock Waves, 2011, 47(1): 103-109.
