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含能材料  2013 

火焰法制备Al/MoO3纳米片阵列的影响因素

DOI: 10.3969/j.issn.1006-9941.2013.06.009

Keywords: 应用化学,含能材料,Al/MoO3,亚稳态分子间复合物(MIC),火焰法

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Abstract:

亚稳态分子间复合物(MIC)阵列由于具有高能量密度、小尺寸条件下能自持反应的优点,在集成化火工品方面具有潜在的应用价值。采用火焰法在硅基底上原位制备了高度有序的MoO3纳米片阵列,探讨了基底材料、纳米阵列生长时间、火焰源因素对生成MoO3形貌的影响,得到了MoO3纳米片阵列的优化制备工艺条件:以硅片为基底,生长时间为5min和甲烷为火焰源。制备的纳米片厚度为100~200nm,宽度约5μm,长度达到十几个微米。分别采用磁控溅射和热蒸发在MoO3纳米片阵列表面镀铝得到Al/MoO3MIC阵列,在铝膜厚度相同的情况下,采用热蒸发镀铝方式优于磁控溅射。热蒸发铝膜厚度为900nm时,所获得的Al/MoO3MIC阵列具有较高的放热量,达到3276J·g-1。

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